A G-band SPST switch with 2.4-dB insertion loss and minimum 28.5-dB isolation using grounded co-planar waveguide folded coupled line topology in 65-nm CMOS technology

A G-Band single pole single throw (SPST) switch for low insertion loss and high isolation is proposed and fabricated using 65-nm CMOS technology. A grounded co-planar wave guide (GCPW) folded coupled line topology is developed to improve the switch isolation and lower its insertion loss simultaneously. Based on this topology, this switch achieves minimum 2.4-dB insertion loss (IL) in G-Band with minimum 28.5-dB isolation (ISO). This switch consumes only 0.0067 mm
²
chip area. To the authors' knowledge, this CMOS SPST switch achieves the best performance among the published switches in bulk CMOS processes at this frequency.