Thin Film In0.53Ga0.47As Schottky Diodes for 28.3-THz Detection

A thin film In
_0.53
Ga
_0.47
As Schottky diode device has been fabricated for 28.3-THz detection. The design and structure of the diode enable dual detection modes of rectification and photodetection. A small contact area and a thin film results in a reduced capacitance and a reduced series resistance, respectively, which enable nonlinear detection, and, the thin film allows generation of hot carriers in the anode and cathode, which results in a net photocurrent by modulating the barrier heights with a dc voltage. Our experimental results show that the detected current can be explained by the superposition of the two currents, which are theoretically calculated. The maximum responsivity is approximately 0.03 A/W, a relatively high value, which is a direct result of the superposition of the currents. The device structure is achieved by a flip-bond transfer method.