Effects of the plasma process for self-aligned nano-carbon field-effect transistors

We fabricated CNW-FETs using a self-alignment process. We will discuss the plasma processes which improve the device properties of CNW-FETs, such as the gate leak current by O
₂
plasma etching and internal electrode contact by H
₂
plasma. H
₂
plasma etching also reduces the noise power spectral density of the drain current, and noise spectroscopy is useful in examining device properties and improving the device fabrication process for Schottky devices such as nano-carbon FETs.