Study of analog and RF performance of UTB-OI-Si substrate MOS transistor using buffered InGaAs and Silicon channel

In this paper with the help of technology computer-aided design (TCAD) simulation we present comparative study of analog and RF performance of an UTBOI- Si Substrate MOS transistor for two different channel materials: Si and InGaAs (with and without buffer). We have analyzed different analog and RF figure of merits such as transconductance, transconductance generation factor, output conductance, intrinsic gain and unity gain cut-off frequency. UTB-OI MOS transistor with InGaAs channel shows significant improvement in both analog and RF performance compared to that using Silicon channel. Addition of buffer layer further improves analog and RF performance.