A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET

For reliable use of Molybdenum Disulfide (MoS2) FETs in ULSI applications device reliability issues like hysteresisbehaviour and non idealities must be well understood andmitigated. In this work, we present unique hysteresis behaviourin the I-V characteristics of few layer MoS 2 FETs. Root causeand physics behind the hysteresis behaviour has been exploredby repeated experiments under various electrical, temperature, pressure, and environmental conditions. A trap based theory isproposed considering the device behaviour in different conditionsand these observations give insight towards device passivation andchoosing the right dielectric for reliable utilization of MoS2 FETs.