Diffusion characterization of In(Ga)As/InAsSb type-II superlattices via electron beam induced current and time-resolved photoluminescence

We present the temperature-dependent characterization of minority carrier diffusion length, minority carrier lifetime, diffusivity, surface recombination velocity and mobility on In(Ga)As/InAsSb type-II superlattices by using electron beam induced current and time-resolved photoluminescence measurements.