GaN-based E-band power amplifier modules

This work discusses the fabrication of two GaN-based power amplifier modules, suitable to increase the available output power levels of E-band multi-Gigabit fixed wireless links dedicated to aeronautics and space applications. The first mounted module contains one GaN-based power amplifier MMIC, packaged in a WR-10 waveguide environment. The module shows a small-signal gain of 13.4 dB with a gain flatness of ± 1 dB, along with a saturated output power of more than 26 dBm (400 mW) for the entire intended frequency range between 71-76 GHz. The second module, parallelizing four MMICs, demonstrates a high saturated output power of more than 31.1 dBm (1290 mW), along with a small-signal gain of typically 11.2 dB and a flatness of ±1 dB within the frequency range of interest.