Zero gate-bias terahertz detection with an asymmetric NMOS transistor

We present an asymmetric NMOS terahertz detector fabricated in a foundry process without any process modifications. Due to a threshold voltage shift, the detector responds optimally at a zero voltage gate-bias, with a measured responsivity (Rv) of 450 V/W and noise equivalent power (NEP) of 80 pW/√Hz for a 0.65 THz radiation chopped at 1 kHz. The operational simplicity of such detector can be leveraged for minimizing the design complexity of future terahertz systems.