Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.