Silicon Carbide for Realization of “Telescope” Ion Detectors

SiC detectors for charged particle identification can be assembled as a “telescope” device. It represents a powerful detector showing some advantages with respect to the traditional silicon ones. Their high gap energy, high density, high sensitivity, and high radiation resistance confer indisputable advantages with respect to silicon. A special geometry for this telescope is proposed and discussed in order to detect ions from low kiloelectronvolts energy up to energies of 100 MeV using different fluence. An active depth of 100 μm is employed for the ion stopper detector and an active superficial layer of 4-μm depth for the energy loss detector. Applications to low fluence use radioactive sources, while short plasma pulses generated by high intensity lasers are used at high fluence.