A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS

A novel trench insulated bipolar transistor (TIGBT) is proposed, where a p-layer beneath the trench gate is introduced to form a self-biased pMOS and provide an additional path for the hole current. In the on-state, the drain-to-source voltage of the trench nMOS is clamped, which helps to decrease the saturation current. In the blocking state, the reverse voltage is sustained by the junction of p-layer/n-drift, so that the n-layer sandwiched by the p-base region and the n-drift region can be as heavily doped as possible to reduce the on-state voltage without affecting the breakdown capability. The simulation results show that, in comparison with the conventional one, under the same breakdown voltage, the saturation current and the on-state voltage of the proposed TIGBT are decreased by 47% and 35%, respectively.