180–220 GHz MMIC amplifier using 70-nm GaAs MHEMT technology

In this paper, we present an MMIC amplifier for the frequency range of 180 to 220 GHz. This amplifier is fabricated using a 70-nm GaAs mHEMT technology. It is a 5-stage amplifier in common-source topology. On-wafer probing shows over 20 dB small-signal gain from 173 to 220 GHz with peak gain of 32 dB at 188 GHz. Saturation output power level of -1 dBm and 1-dB gain compression output power level of -3 dBm are achieved.