Diamond MESFET using ultrashallow RTP boron doping

A diamond p-type depletion-mode MESFET was fabricated using a novel doping technique to drive in and activate boron in type IIa diamond. An ultrashallow p-doped channel of less than 500 AA was created by this rapid-thermal-processing (RTP) solid-state diffusion using cubic boron nitride as the dopant source. The MESFET was observed to pinch off at high positive gate bias, and reverse-bias leakage was below 10/sup -12/ A at +5 V. The ultrashallow channel depth is believed to be a critical factor in obtaining excellent device modulation.<
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