Dynamic avalanche in Charge-Compensation MOSFETs analyzed with the novel single pulse EMMI-TLP method

As a main switch in a broad range of applications, the Charge-Compensation MOS Transistor must be able to withstand the avalanche multiplication regime. Using the classical rating method for avalanche robustness, two destruction limits have been identified - thermal and current limit. However, up to date there is no complete understanding of current induced failure mechanisms. In this paper we combine single transmission line pulses with emission microscopy in order to bring more insight into these kinds of destruction modes. We identify three different avalanche regimes and observe the occurrence of current filaments. We provide an interpretation for filament formation.