Exploration of electromigration and Joule heating effect associated with un-silicided N+ poly

Electromigration (EM) and Joule heating effect associated with un-silicided (U-S) N+ poly were explored based on 40nm technology node. It is found that void caused by electromigration was formed in the metal over contact which is connected to U-S N+ poly. Joule heating of U-S N+ poly with different sizes and structures was investigated by the method of temperature coefficient of resistance (TCR), and it is found that joule heating may be apparent even with normal current density 0.5mA/um and causes significant effect on EM performance.