Film-profile-engineered IGZO thin-film transistors with gate/drain offset for high voltage operation

IGZO transistors with various gate/drain-offset lengths (L
gdo
) were fabricated with the film-profile-engineering method. Breakdown voltage (VBD) of the fabricated devices increases while transconductance (gm) decreases with increasing L
gdo
. In contrast, threshold voltage and subthreshold swing remain relatively unchanged. V
bd
of ∼80 V is obtained with L
gdo
of 0.3 μm. Output characteristics with operation voltage up to 50 V are also demonstrated, evidencing the capability of the device for high-voltage operation. Impact of hot-carrier stress is also investigated in this work.