GaN-HEMT dynamic ON-state resistance characterisation and modelling

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (R
_DS(on)
) values. Thus, dynamic R
_DS(on)
of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic R
_DS(on)
values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of R
_DS(on)
values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that R
_DS(on)
values of this device would increase due to trapping effects.