Novel a-IGZO pixel circuit adopting external circuit for use in 3-D AMOLED displays

A new stereoscopic three-dimensional (3-D) active-matrix organic light-emitting diode (AMOLED) pixel circuit composed of amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) is presented in this paper. The proposed pixel circuit has simple structure by adopting external circuit shared in one column and successfully compensates for the threshold voltage variation of a-IGZO TFTs. Therefore, the aperture ratio and brightness uniformity of displays can be ameliorated effectively. Simulation results show that the relative current error rates of the proposed pixel circuit are less than 7% over the entire input data range.