Integration of Bimetallic Co–Ni Thick Film-Based Devices for Spintronics

Spintronics is the exploitation of both the degree of freedom of electron that is spin as well as the charge, which leads to tremendous development in the field of microelectronic applications. In this paper, bimetallic Co-Ni-based spin FET device is fabricated, and its magnetoresistance behavior has been studied. While, spin current as a function of thickness of Co-Ni-based concatenable spin switch has been studied. The results obtained for spin current using simulation and experimentation show good agreement.