C band GaN diode rectifier with 3W DC output for high power microwave power transmission applications

This research reports a 5.8-GHz band GaN (Gallium Nitride) diode rectifier for high power microwave power transmission (MPT) systems. Designed rectifier is fabricated and measured. The fabricated rectifier has Cu heat sink because of the high power operation. The GaN diode is directly mounted on the heat sink. Also, fabricated substrate is screwed to the heat sink. Measured RF-DC conversion efficiency and output DC power at 5.9GHz are 32.6% and 3042mW, respectively. This report makes a first step for future miniaturization by the hybrid semiconductor integrated circuit (HySIC) technology which utilizes different type semiconductor devices.