Recombination measurement of n-type heavily doped layer in high/low silicon junctions

The hole lifetime within a heavily doped n/sup +/ region has been determined using a measurement technique which evaluates the effective recombination velocity of n-n/sup +/ interfaces. The recombination model of a high/low junction is reviewed. The experiment is described. The measurement results are presented and discussed. Measurements of n/sup +/ layers of different types, like substrates, implanted buried layers, and diffused layers, suggest that the minority-carrier lifetime of such regions can be strongly degraded by the device fabrication processes. Results are consistent with the Shockley-Reed-Hall (SRH) lifetime value, which is two orders of magnitude lower than previously published values for bulk material.<
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