Hall Effect in Thin-Film Transistor

We have analyzed the Hall effect in a thin-film transistor. First, we investigated the dependence of the Hall voltage on the gate voltage. In the subthreshold region, a relatively large Hall voltage is generated regardless of the magnetic field. This is due to the zigzag path of the current flow. In the saturation region, as the gate voltage increases, the Hall voltage also increases, which is dependent on the magnetic field, and in the linear region, it is saturated. Next, we investigated the dependence on the drain voltage. In the linear region, as the drain voltage increases, the Hall voltage also increases, and in the saturation region, it is saturated again. These behaviors can be explained by the electric field in the channel layer calculated using device simulation.