Modeling a Dual-Material-Gate Junctionless FET Under Full and Partial Depletion Conditions Using Finite-Differentiation Method

In this paper, we have developed a model for the surface potential and the drain current of a dual-material double-gate (DMDG) junctionless FET (JLFET) transistor. A finite-differentiation method has been used to decompose the 2-D Poisson's equation into two 1-D equations, which allows the modeling of the DMDG structure as two individual single-material double-gate JLFETs. The two 1-D models are then combined using appropriate boundary conditions to provide a simple solution to the complex 2-D Poisson's equation. The proposed model has been verified for different values of doping concentration (N
_D
), oxide thickness (T
_ox
), and channel thickness (T
_si
) against the numerical simulations.