Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration

To increase the transistor's current (I
_ON
) and decrease the off-state leakage (I
_OFF
), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO
₂
nMOSFET has achieved a high I
_ON
/I
_OFF
of >10
⁷
, and high mobility of >0.5X SiO
₂
/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.