Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits

A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.