Theoretical Investigation of Polarization Sensitive Terahertz Quantum Dot Infrared Photodetector

We propose a polarization sensitive photo-detector based on intraband transition of holes in valence band of InGaAs/GaAs anisotropic quantum dots (QDs). The proposed photo-detector is capable of generating photocurrents to discriminate different angle of polarization of incident light. The operating wavelength covers a wide spectrum in terahertz frequency region that can be obtained by adjusting shape and size of the QDs. We have found the absorption coefficient of the order of 10
⁷
m
^-1
and responsivity of the order of 10
^-4
A/W. The photocurrent to dark current ratio indicates that the device can be used for photodetection up to 70 K.