A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

We compare As and P extension implants for NMOS Si bulk FinFETs with 5nm wide fins. P implanted FinFETs shows improved I
_ON
, +15% with Room Temperature (RT) ion implantation (I/I) and +9% with hot I/I, keeping matched Short Channel Effects (SCE) for gate length (L
_G
) of 30nm compared with As implanted FinFETs. Based on TCAD work, P increases activated dopant concentration in extension compared with As and 5nm fin suppresses off state leakage current under the gate efficiently even in P extension case though P diffusion is faster than As.