Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

To improve both conduction loss and switching loss, trench-etched double-diffused MOS (TED MOS) is proposed and fabricated. The trench side channels of TED MOS can provide both high channel mobility and wide channel width to decrease on-resistance (R
_on
A). Moreover, TED MOS also achieves low gate-to-drain capacitance because its gates and trenches are completely covered with a P-body. Our results show that the figure of merit (R
_on
A×Q
_gd
) of TED MOS can be reduced by 70% compared to that of a conventional double-diffused MOS.