Characteristics of native-oxide confined InGaP/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum well visible laser diodes

We report 670 nm native-oxide confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum well visible laser diodes. The devices are fabricated from a compressively strained GaInP/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P QW double heterostructure laser structure. A real refractive index-guided waveguide is formed by converting part of the p-Al/sub 0.5/In/sub 0.5/P cladding layer above the QW active region into an AlO/sub x/ oxide. Laser diodes of 4 /spl mu/m wide ridge waveguide operate with threshold currents below 15 mA and differential quantum efficiencies over 60%.