Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/ $\lambda $ Transmitter

We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulseamplitude modulation operation after a 10-km single-mode fiber transmission.

I. Introduction

Data traffic is increasing exponentially owing to the rapid growth of cloud services and wireless applications. To cope with this trend, the Ethernet data rate has been increasing rapidly. The 100-gigabit Ethernet (100GbE) was standardized in 2010 [1]. It employs a multi-lane interface with a data rate of Gb/s for single-mode fiber (SMF) applications. The four lanes are allocated on a LAN-WDM grid with 800-GHz spacing at . A multi-lane system will be applied to a future LAN operating beyond 100 Gb/s at rates such as 400 Gb/s, 1 Tb/s and more. However, an increase in the number of lanes is undesirable, which makes it important to obtain a higher data rate per single lane. Therefore, a single light source capable of being modulated at 100-Gb/s is predicted to be needed.