Contents To realize next-generation highly realistic sensation broadcasting systems, the research and development of 8K ultrahigh-definition television (UHDTV) systems have been promoted. To realize 8K video cameras, 33Mpixel sensors [1]–[2] and a full-resolution camera system that uses three 33Mpixel sensors [3] have been reported. However, the weight of the camera with three sensors is over 40kg because the camera requires a large-format color-separation prism. To reduce the size of the camera, single-chip imaging is a promising approach, and a compact single-chip 8K camera that weighs only 2kg has already been developed using a color 33Mpixel CMOS image sensor [4]. However, a conventional single-chip camera has a lower image quality than a full-resolution camera because the total pixel count of the single-sensor camera is only one-third of that of the three-sensor camera, and pixel interpolation is required to configure a full-resolution image. In this paper, a 133Mpixel sensor that can be operated at 60fps to realize a full-resolution 8K single-chip camera is described. To achieve both high speed and suitable ADC resolution, 32-column multiplexing analog readout circuitry and 14b high-speed redundant successive approximation register (SAR) ADCs [5] are adopted. As a result, a full-size image with a data rate of 128.71Gb/s at 60fps has been captured.
Abstract:
To realize next-generation highly realistic sensation broadcasting systems, the research and development of 8K ultrahigh-definition television (UHDTV) systems have been p...Show MoreMetadata
Abstract:
To realize next-generation highly realistic sensation broadcasting systems, the research and development of 8K ultrahigh-definition television (UHDTV) systems have been promoted. To realize 8K video cameras, 33Mpixel sensors [1-2] and a full-resolution camera system that uses three 33Mpixel sensors [3] have been reported. However, the weight of the camera with three sensors is over 40kg because the camera requires a large-format color-separation prism. To reduce the size of the camera, single-chip imaging is a promising approach, and a compact single-chip 8K camera that weighs only 2kg has already been developed using a color 33Mpixel CMOS image sensor [4]. However, a conventional single-chip camera has a lower image quality than a full-resolution camera because the total pixel count of the single-sensor camera is only one-third of that of the three-sensor camera, and pixel interpolation is required to configure a full-resolution image. In this paper, a 133Mpixel sensor that can be operated at 60fps to realize a full-resolution 8K single-chip camera is described. To achieve both high speed and suitable ADC resolution, 32-column multiplexing analog readout circuitry and 14b high-speed redundant successive approximation register (SAR) ADCs [5] are adopted. As a result, a full-size image with a data rate of 128.71Gb/s at 60fps has been captured.
Published in: 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers
Date of Conference: 22-26 February 2015
Date Added to IEEE Xplore: 19 March 2015
ISBN Information:
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Cites in Patents (8)Patent Links Provided by 1790 Analytics
1.
Okamoto, Yuki; Yoneda, Seiichi; Kurokawa, Yoshiyuki, "Imaging device, method for operating the same, and electronic device"
Inventors:
Okamoto, Yuki; Yoneda, Seiichi; Kurokawa, Yoshiyuki
Abstract:
An imaging device with low power consumption. The imaging device includes a plurality of pixels arranged in a matrix, a first circuit, a second circuit, a third circuit, and a fourth circuit. The first circuit has a function of converting an analog signal into a digital signal. The second circuit has a function of detecting a difference between image data of a first frame and image data of a second frame. The third circuit has a function of controlling the frequency of a clock signal. The fourth circuit has a function of generating clock signals of a plurality of frequencies.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
10 June 2016
Grant Date:
25 December 2018
Patent Classes:
Current International Class:
H04N0053780000, H01L0271460000, H01L0310272000, H01L0310320000, H04N0051400000, H04N0053350000, H04N0053745000
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Kusumoto, Naoto, "Imaging device, module, and electronic device"
Inventors:
Kusumoto, Naoto
Abstract:
An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A transistor is provided between a power supply line and a photoelectric conversion element. Exposure is performed by turning on the transistor. Imaging data is retained in a charge retention portion by turning off the transistor.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
29 September 2016
Grant Date:
23 October 2018
Patent Classes:
Current International Class:
H01L0271460000, H04N0052250000, H04N0052320000, H01L0297860000, H01L0310272000
3.
Ikeda, Takayuki, "Imaging device, method for operating the same, module, and electronic device"
Inventors:
Ikeda, Takayuki
Abstract:
An imaging device which can perform imaging with a global shutter system and in which transistors are shared by pixels is provided. The imaging device includes first and second photoelectric conversion elements and first to sixth transistors. Active layers of the first to fourth transistors each include an oxide semiconductor. The imaging device has a configuration in which a reset transistor and an amplifier transistor are shared by a plurality of pixels and can perform imaging with a global shutter system. In addition, the imaging device can be used as a high-speed camera.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
01 September 2016
Grant Date:
02 October 2018
Patent Classes:
Current International Class:
H01L0291000000, H01L0271460000, H04N0053745000
4.
Ohmaru, Takuro; Maehashi, Yukio, "Semiconductor device and electronic device"
Inventors:
Ohmaru, Takuro; Maehashi, Yukio
Abstract:
A small semiconductor device suitable for high-speed operation is provided. The semiconductor device includes a first circuit, a global bit line pair for writing, a global bit line pair for reading, and a local bit line pair. The first circuit includes second to fifth circuits. The second to fifth circuits are electrically connected to each other by the local bit line pair. The second circuit functions as a read/write selection switch. The third circuit functions as a working memory that stores 1-bit complementary data temporarily. The fourth circuit has a function of precharging the local bit line pair. The fifth circuit includes n (n is an integer of 2 or more) sixth circuits. The sixth circuits each have a function of retaining 1-bit complementary data written from the third circuit.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
21 September 2016
Grant Date:
03 April 2018
Patent Classes:
Current International Class:
H01L0271080000, H01L0291000000, H01L0271460000, H01L0292400000, H01L0297860000, H04N0053780000
5.
Okamoto, Yuki; Yoneda, Seiichi, "Imaging device and electronic device"
Inventors:
Okamoto, Yuki; Yoneda, Seiichi
Abstract:
An imaging device in which signals can be read out accurately at high speed is provided. The imaging device includes a plurality of pixels arranged in a matrix, an A/D converter circuit, and a selector circuit. The pixels are electrically connected to an input terminal of the A/D converter circuit. An output terminal of the A/D converter circuit is electrically connected to one of a source and a drain of a transistor. The other of the source and the drain of the transistor is electrically connected to an input terminal of the selector circuit. The transistor includes an oxide semiconductor in an active layer. Other embodiments are described and claimed.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
09 May 2016
Grant Date:
06 March 2018
Patent Classes:
Current International Class:
H04N0053780000, H04N0053745000, H04N0053740000, H04N0053760000, H01L0297860000, H01L0292400000, H01L0310272000, H01L0310320000, H01L0271460000, H01L0271200000
6.
Ikeda, Takayuki, "Imaging device and electronic device"
Inventors:
Ikeda, Takayuki
Abstract:
An imaging device with low power consumption is provided. A pixel circuit has a configuration of detecting difference data between data of a reference frame and data of a target frame in a pixel, and a peripheral circuit has a configuration of efficiently converting the difference data by A/D conversion so as to obtain high compressibility. Difference data which is encoded by compression is written into a memory element and read sequentially. At this time, the frequency of a clock signal can be lowered in accordance with the amount of data. The read data is expanded and the expanded data is added to the reference frame to constitute an image.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
27 July 2016
Grant Date:
23 January 2018
Patent Classes:
Current International Class:
H04N0031400000, H04N0053350000, H04N0052250000, H01L0271460000, H01L0297860000, H04N0053690000, H01L0271200000
7.
Kurokawa, Yoshiyuki, "Imaging device and electronic device"
Inventors:
Kurokawa, Yoshiyuki
Abstract:
An imaging device with low power consumption is provided. The imaging device includes pixels and an A/D converter circuit. The pixels have a function of holding first imaging data and a function of obtaining differential data between the first imaging data and second imaging data. The A/D converter circuit includes a comparator circuit and a counter circuit. When the output of the pixels corresponds to the differential data, the supply of a clock signal to the counter circuit is stopped.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
18 April 2016
Grant Date:
19 December 2017
Patent Classes:
Current International Class:
H04N0053690000, H04N0053745000, H04N0053760000, H04N0052320000
8.
Yamazaki, Shunpei; Nonaka, Yusuke; Kataishi, Riho; Ohki, Hiroshi; Sato, Yuichi; Matsubayashi, Daisuke, "Photoelectric conversion element and imaging device"
Inventors:
Yamazaki, Shunpei; Nonaka, Yusuke; Kataishi, Riho; Ohki, Hiroshi; Sato, Yuichi; Matsubayashi, Daisuke
Abstract:
An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In-Ga-Zn oxide including c-axis-aligned crystals.
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD
Filing Date:
27 June 2016
Grant Date:
05 September 2017
Patent Classes:
Current International Class:
H01L0271460000, H01L0310224000, H01L0310272000, H01L0310296000, H01L0311090000
