GGNMOS as ESD protection in different nanometer CMOS process

Grounded-gate NMOS (GGNMOS) plays a more important role in electrostatic discharge (ESD) protection because of its simple structure and low trigger voltage. Various GGNMOS based on 90nm, 65nm and 40nm CMOS process are compared to investigate its ESD characteristic changes with process advancing. Results show that the key parameters, including channel width and length, have great influence on its ESD metrics.