Strain-induced on germanene monolayer 6nm short channel FET from first-principle study

By first-principle calculations, variation of I-V curves are plotted by applying strains on germanene zig-zag nano-ribbon FET. The vibrational and electronic properties of 2D buckled honeycomb structure of germanene monolayer subjected to the strain have been investigated. The negative differential resistance (NDR) behaviour of short channel germanene zig-zag nano-ribbon FET is analysed. Effect caused by compressive and tensile biaxial and uni-axial strains on the germanene monolayer on 6nm germanene (ZNR) FET is evaluated by density functional theory (DFT) and non-equilibrium greens function (NEGF) approach. We studied the I
_D
.V
_D
curves and the changes show interesting possibilities in future for electronic properties of 2D buckled honeycomb germanene structure.