Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)

Resistive switching memory (RRAM) is one of the most promising emerging device technology for future storage and computing memories. As other emerging memories based on materials storage at the nanoscale, RRAM is affected by switching and read fluctuations. We addressed current fluctuation in RRAM at both cell and array levels. First, we present an analytical model for 1/f and random telegraph noise (RTN) in single (intrinsic) cells, allowing to predict time-dependent broadening of read current I
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distributions. Then we address tail cells with statistically-high noise in large arrays, revealing time-decaying random walk (RW) and intermittent RTN phenomena for the first time. A statistical noise model capable of explaining the current distribution broadening in RRAM arrays is finally developed and discussed.