Novel RF CMOS symmetric inductor with stacked multi layer/finger structure

A symmetrical inductor structure has been developed and optimized using multi-layer and multi-finger stacked configuration. The new design improves the Q factor by 8% and reduces the die area by 30% for the same inductance compared to the typical planar differential inductor. Excellent symmetric performance of Q11/Q22 and L11/L22 has also been demonstrated while the series resistance and substrate parasitic capacitance has been greatly reduced.