Novel D-band Si-based integrated platform for millimeter wave

A low-cost and low-loss Silicon-on-Insulator (SOI) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform supports mm-wave components in the D-band using dielectric image guide structure. The SOI mm-wave integrated platform uses high resistivity Silicon wafers for very low-loss in the D-Band. All passive components can be fabricated on the same platform with high potential of integration of active devices. There is no need for post-fabrication assembly steps for complex systems, which will provide high accuracy of placement of different components on the same platform. The platform is theoretically and experimentally investigated. The fabrication process is a simple one-mask fabrication process composed of deep reactive ion etching of the device layer of the SOI wafer. Design of dielectric image guide in the D-Band is performed. The simulation results show attenuation better than 0.25 dB/cm. Fabrication and experimental measurements are performed at 60 and 100 GHz.