Carrier injection refractive index changes in low-temperature grown silicon waveguide

We demonstrated a carrier-injection refractive index change (Δn) in low-temperature (<;350°C) grown pin μc-Si:H/a-Si:H/μc-Si:H heterostructure waveguide fabricated with a CMOS backend compatible process. A Δn of -4.9×10
^-4
was observed at an applied voltage of 20V.