Influence of implantation temperature on the formation of hydrogen-related defects in InP

The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of V
_In
H
_x
complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.