A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory

A trigate FinFET with a charge trap gate dielectric is demonstrated for high-speed and long retention memory applications. For a capacitor-less dynamic memory cell, a nitride layer is utilized as a charge storage node and it is directly formed on a silicon channel. In addition, novel gate-stacks allow high-speed and write processes under low voltage WITH remarkably endurable operation of up to 10
¹²
cycles. By virtue of the charge trap operation, stored data is maintained for >10
⁴
s at 125°C.