Some considerations for miniaturized measurement shunts in high frequency power electronic converters

Power semi-conductors are able to achieve switching transients within a few nanoseconds and possibly even faster. These fast switching transients will need to be measured and analyzed thoroughly. In this paper four different types of shunt constructions and installations are tested on the same power electronics circuit, giving widely diverse results. Interpreting and analyzing these measurement results will assist in developing accurate current measurement devices for fast switching transient power electronic converters of the future.