A 130 W 95%-efficiency 1 MHz non-isolated boost converter using PWM zero-voltage switching and enhancement-mode GaN FETs

A PWM or quasi-square-wave (QSW) zero-voltage-switching (ZVS) non-isolated boost converter using enhancement-mode GaN (eGaN) FETs is reported in this paper. The new converter topology requires small number of passive components, minimizes the converter switching loss under high-voltage high-frequency operations, and offers low-voltage stress across power transistors. A transformer-based floating gate driver with 30 ns propagation delay and 3 ns rising/falling time is developed to enable high-speed high-side gate driving of the eGaN power FET and thus high-frequency operation of the proposed ZVS converter. A 1-MHz switching frequency 130-W output power prototype circuit of the proposed boost converter has been implemented and the measured peak power efficiency achieves 95%.