Efficiency optimization of high power diode lasers at low temperatures

The authors present studies which assess the benefit of low temperature operation of long cavity (L = 4 mm) broad-area lasers with the goal of achieving both high powers and high efficiencies. To this end, it was investigated the temperature dependence of 975 nm lasers with a single InGaAs quantum well embedded in a 2.4 μm thick waveguide with low aluminium content (Al
_0.13
Ga
_0.87
As).