Investigation of high temperature effects on MOSFET transconductance (g/sub m/)

High temperature effects on CMOS transconductance (g/sub m/) are investigated in linear and saturation regions. Measured g/sub m/ in the saturation region at temperatures between 27-200/spl deg/C were observed to intersect at one gate bias point. However, no such point was observed in the linear region. Similar characteristics was produced using analytical MOSFET current model that incorporate temperature dependence of device parameters.