Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors

Reaction pathways were followed for selenization of CuGa/In precursor structures using in-situ high temperature X-ray diffraction (HTXRD). Precursor films were deposited on Na-free and Na-doped Mo (3 and 5 at %)/Na-free glass. The precursor film was constituted with CuIn, In, Cu
₉
Ga
₄
, Cu
₃
Ga, Cu
₁₆
In
₉
and Mo. HTXRD measurements during temperature ramp selenization showed CIS formation occurs first, followed by CGS formation, and then mixing on the group III sub-lattice to form CIGS. CIGS formation was observed to be complete at ~450 °C for samples deposited on 5 at % Na-doped Mo substrates. MoSe
₂
formation was evidenced after the CIGS synthesis reaction was complete. The Ga distribution in the annealed CIGS was determined by Rietveld refinement. Isothermal reaction studies were conducted for CIGS (112) formation in the temperature range 260-320 °C to estimate the rate constants.