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Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors | IEEE Journals & Magazine | IEEE Xplore

Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors


Abstract:

We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semicond...Show More

Abstract:

We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was ~109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42×10-10 W and 1.44×1011 cm·Hz0.5·W-1, respectively.
Published in: IEEE Photonics Technology Letters ( Volume: 25, Issue: 21, November 2013)
Page(s): 2043 - 2046
Date of Publication: 05 September 2013

ISSN Information:


I. Introduction

Zinc oxide (ZnO) is a versatile functional material. ZnO can be used in photovoltaic devices [1], light-emitting diodes [2], dye-sensitized solar cells [3], and gas sensors [4]. Other than 2-dimensional (2D) ZnO thin films, it is also possible to grow 1-dimensional (1D) ZnO nanostructures, such as nanowires, nanorods, and nanotubes. It has been shown that one can use various methods such as electrochemical deposition [5], hydrothermal method [6], and chemical vapor deposition [7] to grow these ZnO nanostructures. 1D ZnO nanostructures have attracted great attention recently due to their potential applications in nano-devices. With a band-gap energy of 3.37 eV, 1D ZnO nanostructures could also be used as ultraviolet (UV) photodetectors (PDs).

References

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