Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Transparent amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) were fabricated using spin-coating technique at a low annealing temperature of 300
$^{\circ}{\rm C}$
on the 200 mm
$\times\,$
200 mm glass substrate. Solution-processed high-dielectric zirconium oxide dielectric layer, with its amorphous structure and smooth surface, was used to reduce the TFT operating voltage. The resulting TFT was produced with a maximum process temperature of 300
$^{\circ}{\rm C}$
, and had a saturation mobility of 0.8
${\rm cm}^{2}/{\rm V~s}$
, an ON/OFF ratio of
$10^{4}$
, and a threshold voltage of 0.1 V.