Displacement damage analysis of single crystal 50 /spl mu/m thick silicon solar cells

The authors compare the effects of irradiation with various energies on the output characteristics of silicon solar cells by writing the particle fluence as a displacement damage dose. Using this method, the degradation to a given cell structure in any radiation environment can be estimated. In addition, they show that the evolution of cell parameters can be calculated quite accurately using PC-1D with consideration of only the combined effects of minority carrier lifetime reduction and carrier removal. As a result, the behavior of different cell structures can be estimated very quickly.