Intrinsic transistor reliability improvements from 22nm tri-gate technology

This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology, which introduced the tri-gate transistor architecture and features a 3
^rd
generation high-κ/metal-gate process. Results are detailed from all traditional transistor reliability mechanisms, including BTI, TDDB, SILC, and HCI. In addition, characteristics unique to this transistor architecture and process technology are described.