Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si

Developments of heteroepitaxial growth and characteristics of an AlGaN/GaN HEMT on a Si substrate are reported. High-temperature-grown AlGaN/AlN intermediate layers and GaN/AlN strained layer superlattice are effective in improving the crystallinity of a following GaN layer and for growing thick device structure on Si, which resulted in obtaining high-breakdown voltage. The AlGaN/GaN HEMT on Si exhibited the breakdown voltage as high as 1402 V with a state-of-the-art figure-of-merit (FOM = BV
²
/R
_on
) of 2.6×10
⁸
V
²
Ω
^-1
cm
^-2
.