VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays

This letter reports the flip-chip bonding of an 8×8 array of free standing VCSELs to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSELs have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The V/sub th/ and series resistance of the VCSELs were on average approximately 2.1 V and 250 /spl Omega/, respectively, which indicates that good electrical contact was obtainable with this process. The I/sub th/ ranged between 2-4 mA, with a corresponding output power of between 400 μW and >1.0 mW depending on aperture size.